| NTE Type No. |
Output Transistor Configuration |
Maximum Emitter Specifications | Maximum Detector Specifications | Total Power Dissipation (mW) |
Typical Switching Speeds | |||||
| Reverse Breakdown Voltage (Volts) |
Forward Current (mA) |
Forward Voltage Drop (Volts) |
Collector Emitter Voltage (Volts) |
Collector Current (mA) |
Collector Dark Current (nA) |
Turn-On Time (µs) |
Turn-Off Time (µs) |
|||
| V(BR)R | IF | VF @ IF | VCEO | IC | ICEO | PD | ton | toff | ||
| 3100 $6.76 |
NPN Transistor | 6 | 60 | 1.7 | 55 | 100 | 100 | 250 | 8 | 50 |
| 3101 $9.51 |
NPN Darlington | 6 | 60 | 1.7 | 55 | 100 | 100 | 250 | 7 | 45 |
| 3102 $7.46 |
NPN Transistor | 6 | 60 | 1.7 | 55 | 100 | 100 | 250 | 8 | 50 |
| 3103 $9.21 |
NPN Darlington | 6 | 60 | 1.7 | 55 | 100 | 100 | 250 | 7 | 45 |
| 3104 | NPN Transistor | 3 | 50 | 1.2 | 30 | 20 | 200 | 75 | 15 | 15 |
| 3105 $3.46 |
NPN Transistor | 3 | 50 | 1.3 | 30 | 20 | 200 | 75 | 20 | 20 |
Note: All units feature 1mm aperture. All NTE Photon Coupled Interrupter Modules are manufactured using a gallium arsenide emitting diode coupled to a silicon phototransistor or darlington. The gap in the housing provides a means of interrupting the signal with an opaque material thereby switching the output from "ON" into an "OFF" state.
For more info on parts go to NTE website